Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization
Lead Research Organisation:
Liverpool John Moores University
Department Name: Engineering Tech and Maritime Operations
Abstract
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Publications
Baojun Tang
(2014)
Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel
in IEEE Transactions on Electron Devices
Baojun Tang
(2014)
Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <tex-math notation="TeX">$\kappa$ </tex-math></inline-formula> Intergate Dielectrics of Flash Memory Cells
in IEEE Transactions on Electron Devices
Brown J
(2020)
Random-telegraph-noise-enabled true random number generator for hardware security.
in Scientific reports
Duan M
(2014)
Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions
in IEEE Transactions on Electron Devices
Duan M
(2017)
Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETs
in IEEE Transactions on Electron Devices
Duan M
(2016)
Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging
in IEEE Transactions on Electron Devices
| Description | 1. The relation between random telegraph noises (RTN) and NBTI aging has been clarified. It is shown that the increase of RTN by stresses reported in early works is an artefact. 2. A method has been proposed to predict the statistical variations of NBTI for nanometer sized devices. 3. The sources of errors have been identified for hot carrier modelling. 4. A robust kinetic model has been developed and test proven for hot carrier aging. 5. The different types of defects generated under hot carrier stresses have been identified. 6. The interaction between the hot carrier stress and PBTI stress have been clarified. 7. A new method has been developed for direct measurement of RTN-induced threshold voltage shift. |
| Exploitation Route | The industrial partners of the project can use the models developed to simulate their circuits. The TCAD provider can use the model to extract industrial strength model for their simulators. |
| Sectors | Digital/Communication/Information Technologies (including Software),Education,Electronics,Security and Diplomacy |
| URL | https://www.ljmu.ac.uk/about-us/staff-profiles/faculty-of-engineering-and-technology/department-of-electronics-and-electrical-engineering/jian-zhang |
| Description | 1. The method developed has been used to model the statistical variation of NBTI. 2. The kinetic model developed has been used to model the hot carrier aging and device lifetime. 3. The method developed for assessing the accuracy of extracted statistical properties has been used to select the number of devices under tests. 4. A prototype of True Random Number Generator has been developed using the generated RTN for IoT security. 5. The PI has been invited to deliver short courses based on the outputs of this project. |
| First Year Of Impact | 2018 |
| Sector | Digital/Communication/Information Technologies (including Software),Education,Electronics,Security and Diplomacy |
| Impact Types | Economic |