High Performance Buffers for RF GaN Electronics
Lead Research Organisation:
CARDIFF UNIVERSITY
Department Name: Sch of Engineering
Abstract
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Organisations
Publications
Yang F
(2022)
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs
in IEEE Transactions on Electron Devices
| Description | Contributed to the general consensus that the design of GaN buffers can have a significant impact of there high frequency performance. |
| Exploitation Route | Advice technology developers in how to design GaN buffers. |
| Sectors | Aerospace Defence and Marine Digital/Communication/Information Technologies (including Software) Electronics |