C-band quantum-dot lasers on monolithically grown Si platform
Lead Research Organisation:
UNIVERSITY COLLEGE LONDON
Department Name: Electronic and Electrical Engineering
Abstract
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Organisations
Publications
Cao V
(2022)
Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform
in Frontiers in Physics
Dang M
(2023)
The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates
in Journal of Physics D: Applied Physics
Guo D
(2023)
High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
in IEEE Journal of Quantum Electronics
Jia H
(2022)
The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix
in Journal of Physics D: Applied Physics
Jia H
(2023)
Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate
in Applied Physics Letters
Liu J
(2022)
Theoretical analysis and modelling of degradation for III-V lasers on Si
in Journal of Physics D: Applied Physics
Liu S
(2024)
Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon
in Applied Physics Letters
Ma J
(2023)
Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon.
in Light, science & applications
Mahoney J
(2022)
Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers.
in Optics express
| Description | Two issues related to the growth of InAs/InP quantum dots are (1) the formation of quantum dashes instead of quantum dots, and (2) the emission wavelength being significantly longer than the telecom 1550 nm range. We initially demonstrated the high yield of dot formation by optimizing the growth parameters. Subsequently, we developed an In-flush technique to shorten the emission wavelength of quantum dots to 1550 nm. Based on these inventions, we demonstrated the high-operation temperature (>100 oC) operation for C-band quantum dot lasers. |
| Exploitation Route | These growth methods will support UCL MBE facility to supply InAs/InP quantum dot samples to UK semiconductor community through National Epitaxy Facility. |
| Sectors | Digital/Communication/Information Technologies (including Software) Electronics Manufacturing including Industrial Biotechology |
| Description | A National Research Facility for Epitaxy |
| Amount | £12,250,477 (GBP) |
| Funding ID | EP/X015300/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 05/2022 |
| End | 06/2027 |
| Description | EPSRC Compound Semiconductor Manufacturing Hub for a Sustainable Future |
| Amount | £11,884,843 (GBP) |
| Funding ID | EP/Z532848/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 08/2024 |
| End | 09/2031 |