C-band quantum-dot lasers on monolithically grown Si platform
Lead Research Organisation:
University College London
Department Name: Electronic and Electrical Engineering
Abstract
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Organisations
Publications
Cao V
(2022)
Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform
in Frontiers in Physics
Dang M
(2023)
The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates
in Journal of Physics D: Applied Physics
Guo D
(2023)
High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
in IEEE Journal of Quantum Electronics
Jia H
(2022)
The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix
in Journal of Physics D: Applied Physics
Jia H
(2023)
Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate
in Applied Physics Letters
Liu J
(2022)
Theoretical analysis and modelling of degradation for III-V lasers on Si
in Journal of Physics D: Applied Physics
Ma J
(2023)
Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon.
in Light, science & applications
Mahoney J
(2022)
Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers.
in Optics express
Yang J
(2023)
From past to future: on-chip laser sources for photonic integrated circuits.
in Light, science & applications