Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
The National Epitaxy Facility requires three pieces of equipment to upgrade its scientific capabilities and to improve the efficiency of the facility in meeting user needs.
The facility will install:
1. An automated Hall effect measurement system with 3-300K variable temperature capability and variable magnetic field capability of up to 2.5T. This will significantly enhance the use of Hall effect measurements in the facility for developing new materials and for monitoring material quality trends to the benefit of all users.
2. A Nomarski inspection microscope used to screen all wafers in the facility for surface defects, which is a strong marker of material quality. The microscope will be fully automated and can cater for wafers sizes up to 200mm in diameter
3. A Reflection High Energy Electron Diffraction (RHEED) gun to be added to the facility's MBE cluster system. This MBE system is designed for the scale up of quantum dot technologies for applications in Quantum Computing, Quantum Communications and Quantum Imaging. The RHEED system will be a vital part of the development process for high quality semiconductor quantum dots and will be used for real-time monitoring of surface quality during epitaxial growth and in the cleaning of wafers.
The facility will install:
1. An automated Hall effect measurement system with 3-300K variable temperature capability and variable magnetic field capability of up to 2.5T. This will significantly enhance the use of Hall effect measurements in the facility for developing new materials and for monitoring material quality trends to the benefit of all users.
2. A Nomarski inspection microscope used to screen all wafers in the facility for surface defects, which is a strong marker of material quality. The microscope will be fully automated and can cater for wafers sizes up to 200mm in diameter
3. A Reflection High Energy Electron Diffraction (RHEED) gun to be added to the facility's MBE cluster system. This MBE system is designed for the scale up of quantum dot technologies for applications in Quantum Computing, Quantum Communications and Quantum Imaging. The RHEED system will be a vital part of the development process for high quality semiconductor quantum dots and will be used for real-time monitoring of surface quality during epitaxial growth and in the cleaning of wafers.
Organisations
People |
ORCID iD |
| Jon Heffernan (Principal Investigator) |