Monolithic on-chip integration of microscale laser diodes (uLDs) and electronics for micro-displays and visible light communications
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
Micro-displays with compact screens of <= 1/4 inch diagonal length have wide ranging applications in smart watches, smart phones, augmented reality & virtual reality (AR & VR) devices, Helmet Mounted Displays (HMD), and Head-Up Displays (HUD). Their individual pixel elements typically consist of a large number of microscale visible emitters (which are currently microLEDs). The global micro-display market has been predicted to reach $4.2 billion by 2025 at a Compound Annual Growth Rate (CAGR) of 100%. However, the significantly increasing demands on microdisplays are pushing the requirements for ultra-high resolution and ultra-high efficiency. Current microdisplays are far from satisfactory, as a number of fundamental challenges cannot be met by any existing technologies. Therefore, a disruptive technology needs to be developed.
Visible light communication (VLC) is an emerging technology, in principle offering approximately 300 THz of license free bandwidth that is four orders of magnitude larger than that available in current RF based Wi-Fi or 5G. Considering the highly congested nature of current RF based Wi-Fi, it is expected that VLC would be the leading candidate to offer a complementary solution. Unfortunately, the current approach to the fabrication of VLC is substantially limited to visible LED technologies with conventional electrical driving methods. This approach suffers from a number of insurmountable barriers. Therefore, the performance of current VLC is far below requirements. Global Market Insights has forecasted that the VLC market will exceed $8 billion by 2030.
We propose a Centre-to-Centre consortium consisting of ten leading academics from three universities in the UK (Sheffield; Strathclyde; Bath) and two universities in USA (Harvard; Massachusetts Institute of Technology) to develop a novel integration technology in order to achieve the ultimate micro-display systems and the ultimate visible light communication systems. Unlike any existing photonics & electronics fabrication approaches, we propose a completely different approach to monolithically integrate microscale laser diodes (uLDs) and high electron mobility transistors (HEMTs) on a single chip, where each uLD is electrically driven by individual HEMTs. This will allow us to achieve devices/systems which are impossible to obtain by any existing approaches.
Visible light communication (VLC) is an emerging technology, in principle offering approximately 300 THz of license free bandwidth that is four orders of magnitude larger than that available in current RF based Wi-Fi or 5G. Considering the highly congested nature of current RF based Wi-Fi, it is expected that VLC would be the leading candidate to offer a complementary solution. Unfortunately, the current approach to the fabrication of VLC is substantially limited to visible LED technologies with conventional electrical driving methods. This approach suffers from a number of insurmountable barriers. Therefore, the performance of current VLC is far below requirements. Global Market Insights has forecasted that the VLC market will exceed $8 billion by 2030.
We propose a Centre-to-Centre consortium consisting of ten leading academics from three universities in the UK (Sheffield; Strathclyde; Bath) and two universities in USA (Harvard; Massachusetts Institute of Technology) to develop a novel integration technology in order to achieve the ultimate micro-display systems and the ultimate visible light communication systems. Unlike any existing photonics & electronics fabrication approaches, we propose a completely different approach to monolithically integrate microscale laser diodes (uLDs) and high electron mobility transistors (HEMTs) on a single chip, where each uLD is electrically driven by individual HEMTs. This will allow us to achieve devices/systems which are impossible to obtain by any existing approaches.
Organisations
- University of Sheffield (Lead Research Organisation)
- Massachusetts Institute of Technology (Collaboration)
- Microsoft Research Limited (Project Partner)
- Harvard University (Project Partner)
- Plessey Semiconductors Ltd (Project Partner)
- Compound Semiconductor Applications Catapult (Project Partner)
- Massachusetts Institute of Technology (Project Partner)
- Dynex Semiconductor (CRRC Times UK) (Project Partner)
- Sony Deutschland GmbH (Project Partner)
Publications
Esendag V
(2022)
Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor.
in Materials (Basel, Switzerland)
Feng P
(2022)
A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission
in ACS Applied Electronic Materials
Fletcher P
(2022)
Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs
in Journal of Physics D: Applied Physics
Holly Haggar JI
(2022)
Study of the Luminescence Decay of a Semipolar Green Light-Emitting Diode for Visible Light Communications by Time-Resolved Electroluminescence.
in ACS photonics
Zhu C
(2022)
A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions
in Journal of Physics D: Applied Physics
| Description | Consultation with Department of Digital Culture Media and Sports and latterly Department of Science Innovation and Technology on the Semiconductor Strategy and the ongoing consultations on the Industrial Strategy |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| URL | https://assets.publishing.service.gov.uk/media/66599c1f0c8f88e868d3343c/national_semiconductor_strat... |
| Title | Epitaxy of advanced lasers |
| Description | To facilitate the use of transfer print methods for verticla cavity lasers in this project, we have made progress on the development of the epitaxy of advanced laser structures indluing the use of VCSELs on sacrifical layers and the use of novel distributed bragg reflectors to manage strain in very thick structures. This has been developed on a new MOVPE reactor installed in the national epitacy facility in Sheffield in 2022. The capability will eventually be made available to all UK researchers through the National Epitaxy Facility |
| Type Of Material | Improvements to research infrastructure |
| Year Produced | 2022 |
| Provided To Others? | No |
| Impact | To early to state |
| URL | https://www.nationalepitaxyfacility.co.uk/iii-v-technologies/facilities/metal-organic-chemical-vapou... |
| Description | A long-term collaboration with MIT |
| Organisation | Massachusetts Institute of Technology |
| Country | United States |
| Sector | Academic/University |
| PI Contribution | establish a long-term collaboration with MIT |
| Collaborator Contribution | Fabrication of our samples into device by accessing their unique expertise and facilities |
| Impact | not yet |
| Start Year | 2021 |
| Description | Contribution to Royal Academy of Engineering report on Infrastructure needs for the National Quantum Technology Programme |
| Form Of Engagement Activity | A formal working group, expert panel or dialogue |
| Part Of Official Scheme? | No |
| Geographic Reach | National |
| Primary Audience | Policymakers/politicians |
| Results and Impact | A report by the Royal Academy of Engineering on Infrastructure needs for the National Quantum Technology Programme. This was review of ongoing needs and investment opportunities that contributed to Phase III of the National Quantum technology Programme particularly in relation to industrial scale-up and commercial exploitations of quantum technology R&D. Consultation involved 1-2-1 interviews and attendance at a number of RAEng workshops. |
| Year(s) Of Engagement Activity | 2023,2024 |
| URL | https://raeng.org.uk/media/rrqjm2v3/quantum-infrastructure-review.pdf |
| Description | Creating an Innovation Pipeline for Compound Semiconductors in the UK |
| Form Of Engagement Activity | Participation in an activity, workshop or similar |
| Part Of Official Scheme? | No |
| Geographic Reach | National |
| Primary Audience | Professional Practitioners |
| Results and Impact | Under the auspices of the National Epitaxy Facility and supported by the Photonics Manufacturing Hub, a one day workshop on the infrastructure available to support innovation in compound semiconductors int he UK was held in February 2022. The meeting was online and attracted over 180 delegates from both academia, industry, government and research councils. Outputs of the meeting are being actively fed into government consultations and will be followed up in summer 2022. |
| Year(s) Of Engagement Activity | 2022 |
| URL | https://www.nationalepitaxyfacility.co.uk/news-events/ |
| Description | Formation of an All-party Parliamentary Group (APPG) on Semiconductors |
| Form Of Engagement Activity | A formal working group, expert panel or dialogue |
| Part Of Official Scheme? | No |
| Geographic Reach | National |
| Primary Audience | Policymakers/politicians |
| Results and Impact | In 2024 a new APPG on semiconecutors was formed to create a body that can inform and advise MPs on the importance of the semiconductor industry in the Uk and the opportunities available for UK researchers and industry in this huge industry. The group is comprised of MPs and advisory board consisting of academics and industry representatives. Jon Heffernan is a member of the advisory board. Several key events have been held by the APPG including an important reception in Parliament in Feb 2025. The output of the group is reported to the broad semiconductor community int he UK and has a broad reach including to the media. |
| Year(s) Of Engagement Activity | 2024 |
| URL | https://www.appgsemcon.co.uk |
