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Spin current propagation through epitaxial antiferromagnetic thin films

Lead Research Organisation: Diamond Light Source
Department Name: CEO's Office

Abstract

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

Publications

10 25 50
 
Description Unidirectional Multi-Pulse Helicity-Independent All-Optical Switching in [Ni/Pt] Based Synthetic Ferrimagnets.
Paper submitted to PRB, currently under review
Exploitation Route Nickel-platinum based synthetic ferrimagnets (SFi's) are highly tunable and rare-earth-free materials
that allow ultrafast all optical control of magnetism to be explored. This study considers
a SFi composed of a ferromagnetic [Ni/Pt] multilayer and a ferromagnetic Co layer, separated by
an Ir layer that mediates an antiferromagnetic coupling. Helicity-independent all optical switching
(HI-AOS) between two antiparallel magnetization states is observed. AOS may be realized at increased
temperature through reduction of the thickness of the Pt layers. Switching is unidirectional
and has a strong dependence on the applied magnetic field history that points to the importance of
nanoscale magnetic texture in controlling AOS in SFi systems.
Sectors Digital/Communication/Information Technologies (including Software)

Electronics

Energy

Environment

 
Description The goal of this research was to deepen our understanding of spin wave propagation in antiferromagnetic (AFM) materials, particularly NiO and CoO, with the aim of advancing low-power, high-speed spintronic devices. By optimizing spin current transmission and amplification, this work contributes to the development of spin-torque RAM (ST-RAM), offering the potential for faster, more energy-efficient memory technologies. Given that AFM materials operate at terahertz (THz) frequencies, our findings also have significant implications for THz signal processing. These insights could be leveraged by companies such as Seagate, Western Digital, and semiconductor firms exploring AFM materials for data storage and computing applications. Through x-ray ferromagnetic resonance (XFMR) experiments, we demonstrated that spin current in NiO is predominantly carried by GHz-frequency evanescent spin waves, rather than previously assumed THz-frequency thermal magnons. Our findings revealed that spin current transmission peaked at a 6 nm NiO thickness, then declined in a manner consistent with evanescent wave decay. Even when a nonmagnetic spacer (Ag or Pd) was introduced to disrupt interfacial exchange coupling, spin current transmission persisted, confirming the role of coherent spin waves in spin transport. Moreover, we identified conditions under which spin current amplification occurs, suggesting that NiO could serve as an active medium for enhancing spin transport. Our results validate theoretical models of spin current transport in AFMs and reinforce the feasibility of using AFM materials for energy-efficient spintronic devices. The potential for spin current amplification could lead to significant reductions in energy consumption for data centres and embedded computing, aligning with global initiatives to develop sustainable, low-power computing solutions. Our findings establish a foundation for future advancements in AFM-based spintronics, paving the way for next-generation memory, computing, and signal processing technologies.
First Year Of Impact 2023
Sector Digital/Communication/Information Technologies (including Software),Education,Electronics,Energy,Environment
Impact Types Economic