Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
The National Epitaxy Facility requires equipment to upgrade its scientific capabilities and to improve the efficiency of the facility in meeting user needs.
The facility will install a new cryostat that will allow the mounting of full epitaxial wafers up to 3" in diameter. The cryostat will be combined with existing equipment in the facility to create a low temperature Photoluminescence (PL) mapping system capable of producing PL maps over the full 3" wafer, with spatial resolution down to the micron level.
In addition, we will install a time-resolved photon counting system to allow for both CW and time-resolved mapping of emission characteristics over full wafers.
The equipment will improve the efficiency of the epitaxy service provided by the National Epitaxy Facility by increasing the range and quality of characterisation data available to us and allowing cryogenic wafer mapping to be done in a single run, instead of multiple runs on small cleaved samples.
New scientific capabilities will also be enabled , particularly in areas such as manufacturing research where detailed information on spatial variations across epitaxial wafers is of critical importance.
The facility will install a new cryostat that will allow the mounting of full epitaxial wafers up to 3" in diameter. The cryostat will be combined with existing equipment in the facility to create a low temperature Photoluminescence (PL) mapping system capable of producing PL maps over the full 3" wafer, with spatial resolution down to the micron level.
In addition, we will install a time-resolved photon counting system to allow for both CW and time-resolved mapping of emission characteristics over full wafers.
The equipment will improve the efficiency of the epitaxy service provided by the National Epitaxy Facility by increasing the range and quality of characterisation data available to us and allowing cryogenic wafer mapping to be done in a single run, instead of multiple runs on small cleaved samples.
New scientific capabilities will also be enabled , particularly in areas such as manufacturing research where detailed information on spatial variations across epitaxial wafers is of critical importance.
Organisations
People |
ORCID iD |
| Jon Heffernan (Principal Investigator) |