Perovskite X-ray Photon Counting Detector
Lead Research Organisation:
University of Cambridge
Department Name: Chemical Engineering and Biotechnology
Abstract
Perovskite X-ray Photon Counting Detectors (PePAD) project focuses on the development of multi-pixelated photon counting detectors (PCDs) via growing high-quality perovskite (PVK) single crystals directly onto pixelated application-specific integrated circuit (ASIC) arrays, thus realising the first pixelated PVK-based PCDs. The PePAD is an ambitious project comprised of the following objectives.
Objective 1: Modular and shape-controlled growth of PVK single crystals onto device-relevant substrates with optoelectronic properties rivalling to conventional Cadmium Telluride (CdTe) or Cadmium Zinc Telluride (CZT) semiconductors. WP1 will first allow fabricating PVK single crystals via inverse temperature crystallisation (ITC) method. The levers to optimise the PVK single crystals growth will include tuning fractions of A-site cations (FA, Cs and/or MA) and additives in the crystal growth including EDTA will be used inspired by the host group's recent work.
Objective 2: Fabrication and build a strong fundamental understanding of single-pixel PCD with self-operating capability (at 0V applied bias), low dark current, high energy resolution and stable operation. WP2 will allow optimisation of device architecture and their components. The general structure of single-pixel PCD will be a Me/HTL/PVK single crystal/ETL/Me or TCO. Interfaces will be optimised to best address the defects arising at the interfaces of PVK and ETL or HTL, including use of 2D/3D surfaces, LiF and/or MgF2 thin layers inspired by PV works.
Objective 3: Fabrication and demonstration of high-performance pixelated PCD with low charge sharing and low pixel-to-pixel leakage current, without pulse pileup effect at certain fluxes and high image resolution. WP3 will allow demonstration of PVK single crystal growth already optimised in WP1 directly on the ASIC arrays. The optimized charge transport layers and electrodes in WP2 will be deposited on the PVK single crystals to complete multi-pixel PCDs.
Objective 1: Modular and shape-controlled growth of PVK single crystals onto device-relevant substrates with optoelectronic properties rivalling to conventional Cadmium Telluride (CdTe) or Cadmium Zinc Telluride (CZT) semiconductors. WP1 will first allow fabricating PVK single crystals via inverse temperature crystallisation (ITC) method. The levers to optimise the PVK single crystals growth will include tuning fractions of A-site cations (FA, Cs and/or MA) and additives in the crystal growth including EDTA will be used inspired by the host group's recent work.
Objective 2: Fabrication and build a strong fundamental understanding of single-pixel PCD with self-operating capability (at 0V applied bias), low dark current, high energy resolution and stable operation. WP2 will allow optimisation of device architecture and their components. The general structure of single-pixel PCD will be a Me/HTL/PVK single crystal/ETL/Me or TCO. Interfaces will be optimised to best address the defects arising at the interfaces of PVK and ETL or HTL, including use of 2D/3D surfaces, LiF and/or MgF2 thin layers inspired by PV works.
Objective 3: Fabrication and demonstration of high-performance pixelated PCD with low charge sharing and low pixel-to-pixel leakage current, without pulse pileup effect at certain fluxes and high image resolution. WP3 will allow demonstration of PVK single crystal growth already optimised in WP1 directly on the ASIC arrays. The optimized charge transport layers and electrodes in WP2 will be deposited on the PVK single crystals to complete multi-pixel PCDs.
