Infra-Plas: Colloidal Quantum Dots for Short-Wave Infrared Plasmonic Lasers
Lead Research Organisation:
King's College London
Department Name: Physics
Abstract
Lasers and optical amplifiers in the near- and short-wave infrared regions (700 nm to 3000 nm) are are a key enabling photonic
technology in modern technologies. They span many relevant technological windows such as telecommunications bands (1250 nm
to 1625 nm), LIDAR wavelengths (905 nm & 1550 nm), eye-safe wavelengths (>1400 nm), and the NIR-IIc (1700 nm to 1880 nm), NIR-III
(2080 nm to 2340 nm) biological windows and atmospheric gas sensing spectroscopy (~2000 nm). However, the integration of
traditional vacuum deposited semiconductor laser diodes and silicon microelectronics/photonics is notoriously difficult due to
material incompatibilities, preventing the very-large scale integration of these technologies and the development of on-chip
quantum communication/information devices. Solution processed PbS colloidal quantum dots (CQDs) could better serve these
applications in the infrared as they can be readily integrated into silicon technologies, lend themselves to cost-effective large scale
production of photonic devices and have tunable optoelectronic properties. However, the first generation of PbS lasers suffer from
large FWHM (~ 4 nm) and low q-factors, limiting their application. High q-factor cavities, such as those generated from plasmonic
strucures. are therefore also required to maximize the potential of PbS CQD lasers. The aim of this project will be to make a crucial
step in advancing PbS CQD laser technology for integrated photonics and explore their viability as future photonic devices, through
the development of plasmonic caivites.
technology in modern technologies. They span many relevant technological windows such as telecommunications bands (1250 nm
to 1625 nm), LIDAR wavelengths (905 nm & 1550 nm), eye-safe wavelengths (>1400 nm), and the NIR-IIc (1700 nm to 1880 nm), NIR-III
(2080 nm to 2340 nm) biological windows and atmospheric gas sensing spectroscopy (~2000 nm). However, the integration of
traditional vacuum deposited semiconductor laser diodes and silicon microelectronics/photonics is notoriously difficult due to
material incompatibilities, preventing the very-large scale integration of these technologies and the development of on-chip
quantum communication/information devices. Solution processed PbS colloidal quantum dots (CQDs) could better serve these
applications in the infrared as they can be readily integrated into silicon technologies, lend themselves to cost-effective large scale
production of photonic devices and have tunable optoelectronic properties. However, the first generation of PbS lasers suffer from
large FWHM (~ 4 nm) and low q-factors, limiting their application. High q-factor cavities, such as those generated from plasmonic
strucures. are therefore also required to maximize the potential of PbS CQD lasers. The aim of this project will be to make a crucial
step in advancing PbS CQD laser technology for integrated photonics and explore their viability as future photonic devices, through
the development of plasmonic caivites.
