High permittivity dielectrics on Ge for end of Roadmap application
Lead Research Organisation:
Liverpool John Moores University
Department Name: Engineering Tech and Maritime Operations
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Publications
Baojun Tang
(2014)
Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <tex-math notation="TeX">$\kappa$ </tex-math></inline-formula> Intergate Dielectrics of Flash Memory Cells
in IEEE Transactions on Electron Devices
Baojun Tang
(2012)
Investigation of Abnormal $V_{\rm TH}/V_{\rm FB}$ Shifts Under Operating Conditions in Flash Memory Cells With $ \hbox{Al}_{2}\hbox{O}_{3}$ High-$\kappa$ Gate Stacks
in IEEE Transactions on Electron Devices
Baojun Tang
(2014)
Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel
in IEEE Transactions on Electron Devices
Benbakhti B
(2012)
Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
in IEEE Electron Device Letters
Duan M
(2013)
Defect Losses under Different Processes, Stress, Recovery, and Anneal Conditions
in ECS Transactions
Duan M
(2013)
Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of
in Technical Digest of the International Electron Devices Meeting (IEDM)
Duan M
(2012)
Defect Loss: A New Concept for Reliability of MOSFETs
in IEEE Electron Device Letters
Duan M
(2014)
Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions
in IEEE Transactions on Electron Devices
Duan M
(2013)
New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation
in IEEE Transactions on Electron Devices
Duan, M.
(2013)
Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of SRAM
in 2013 Ieee International Electron Devices Meeting (Iedm)
Hatta S
(2013)
Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects
in IEEE Transactions on Electron Devices
Ji Z
(2012)
A New Mobility Extraction Technique Based on Simultaneous Ultrafast $I_{d}$-$V_{g}$ and $C_{\rm cg}$-$V_{g}$ Measurements in MOSFETs
in IEEE Transactions on Electron Devices
Ji Z
(2012)
Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs
in IEEE Transactions on Electron Devices
Ji, Z.
(2013)
Negative Bias Temperature Instability Lifetime Prediction: Problems and Solutions
in 2013 Ieee International Electron Devices Meeting (Iedm)
Jigang Ma
(2014)
Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With <inline-formula> <tex-math notation="TeX">${\rm GeO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ </tex-math></inline-formula> Stack
in IEEE Transactions on Electron Devices
Lin L
(2011)
A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States
in IEEE Transactions on Electron Devices
Liu W
(2013)
Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors
in IEEE Transactions on Electron Devices
Ma J
(2014)
Energy Distribution of Positive Charges in <formula formulatype="inline"> <tex Notation="TeX">${\rm Al}_{2}{\rm O}_{3}{\rm GeO}_{2}/{\rm Ge}$</tex></formula> pMOSFETs
in IEEE Electron Device Letters
Ma J
(2016)
A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO 2 /Ge and SiON/Si pMOSFETs
in IEEE Transactions on Electron Devices
Ma J
(2013)
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
in Microelectronic Engineering
Meng Duan
(2013)
New Insights Into Defect Loss, Slowdown, and Device Lifetime Enhancement
in IEEE Transactions on Electron Devices
Tang B
(2013)
Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
in Microelectronic Engineering
Tang B
(2013)
Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-$\kappa$ Interpoly Gate Dielectric Stacks
in IEEE Transactions on Electron Devices
Tang BJ
(2011)
Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash
in Technical Digest of the International Electron Devices Meeting (IEDM)
Zhang J
(2022)
Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction
in Electronics
Zhang J
(2018)
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
in Microelectronics Reliability
Zhang JF
(2017)
DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI
Zhang, J. F.
(2012)
Development of New Characterisation Technique for Interface States Beyond Bandgap
in 2012 Ieee 11th International Conference on Solid-State and Integrated Circuit Technology (Icsict-2012)
Description | The key findings of this project upto now include: (1) The capture cross sections of electron traps are determined; (2) An energy switching model has been proposed for hole traps; (3) The energy profile of hole traps has been extracted; (4) Mechanism for the differences in NBTI under DC and AC stresses has been clarified; (5) The sources for defects have been identified. (6) Based on the above, a technique for predicting the BTI lifetime under both DC and AC stresses has been proposed and testified against experimental data. |
Exploitation Route | Potential use includes: (i) Assess the PBTI device lifetime under both DC and AC stresses for Ge nMOSFETs; (ii) Assess the NBTI device lifetime under both DC and AC stresses for Ge pMOSFETs; (iii) Process optimization by suppressing defects through controlling the identified sources. (iv) Modelling the device degradation in circuits using Ge MOSFETs. Exploitation routes are: (i) Non-academic project partners; (ii) International conferences. |
Sectors | Digital/Communication/Information Technologies (including Software),Education,Electronics |
Description | 1. The BTI lifetime prediction method has been used in the qualification of the Ge processes. 2. The sources of defects identified have been used in assisting process optimization. 3. The PI has been invited to deliver short courses on Bias Temperature Instability modelling. |
First Year Of Impact | 2019 |
Sector | Digital/Communication/Information Technologies (including Software),Education,Electronics |
Impact Types | Economic |