Mechanisms and Control of Resistive Switching in Dielectrics
Lead Research Organisation:
University of Cambridge
Department Name: Engineering
Abstract
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Organisations
People |
ORCID iD |
John Robertson (Principal Investigator) |
Publications
Li H
(2017)
Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces
in Applied Physics Letters
Sedghi N
(2017)
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
in Applied Physics Letters
Chai Z
(2018)
The Over-Reset Phenomenon in Ta 2 O 5 RRAM Device Investigated by the RTN-Based Defect Probing Technique
in IEEE Electron Device Letters
Dawson J
(2016)
Nature of Cu Interstitials in Al 2 O 3 and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices
in The Journal of Physical Chemistry C
Description | Ways to improve memory performance, The on/off memory window in RRAM devices can be widened due to our research, giving the devices longer endurance (lifetime) and greater reliability. |
Exploitation Route | Materials selection for memory devices. The on/off memory window in RRAM devices can be widened due to our research, giving the devices higher endurance (lifetime). We have also developed a way to improve the materials choice for 2-terminal 'selector' devices. These are an essential component which is added in series to the RRAM element. |
Sectors | Electronics |
Description | Greater links with microelectronic companies such as Micron semiconductor. |
First Year Of Impact | 2018 |
Sector | Electronics |
Impact Types | Economic |