Mechanisms and Control of Resistive Switching in Dielectrics
Lead Research Organisation:
University of Cambridge
Department Name: Engineering
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Organisations
People |
ORCID iD |
John Robertson (Principal Investigator) |
Publications
Guo Y
(2015)
Ab initio calculations of materials selection of oxides for resistive random access memories
in Microelectronic Engineering
Guo Y
(2016)
AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels
in Journal of Applied Physics
Li H
(2015)
Calculation of TiO 2 Surface and Subsurface Oxygen Vacancy by the Screened Exchange Functional
in The Journal of Physical Chemistry C
Guo Y
(2015)
Comparison of oxygen vacancy defects in crystalline and amorphous Ta2O5
in Microelectronic Engineering
Li H
(2016)
Effect of metal oxide additions to quality on Ge/GeO2 interfaces
in Journal of Applied Physics
Dawson J
(2015)
Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance
in Applied Physics Letters
Sedghi N
(2017)
Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
in Applied Physics Letters
Li H
(2017)
Germanium oxidation occurs by diffusion of oxygen network interstitials
in Applied Physics Letters
Dawson J
(2016)
Improved Calculation of Li and Na Intercalation Properties in Anatase, Rutile, and TiO 2 (B)
in The Journal of Physical Chemistry C
Dawson J
(2016)
Nature of Cu Interstitials in Al 2 O 3 and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices
in The Journal of Physical Chemistry C
Chai Z
(2018)
The Over-Reset Phenomenon in Ta 2 O 5 RRAM Device Investigated by the RTN-Based Defect Probing Technique
in IEEE Electron Device Letters
Sedghi N
(2017)
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
in Applied Physics Letters
Li H
(2017)
Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces
in Applied Physics Letters
Description | Ways to improve memory performance, The on/off memory window in RRAM devices can be widened due to our research, giving the devices longer endurance (lifetime) and greater reliability. |
Exploitation Route | Materials selection for memory devices. The on/off memory window in RRAM devices can be widened due to our research, giving the devices higher endurance (lifetime). We have also developed a way to improve the materials choice for 2-terminal 'selector' devices. These are an essential component which is added in series to the RRAM element. |
Sectors | Electronics |
Description | Greater links with microelectronic companies such as Micron semiconductor. |
First Year Of Impact | 2018 |
Sector | Electronics |
Impact Types | Economic |