Mechanisms and Control of Resistive Switching in Dielectrics
Lead Research Organisation:
UNIVERSITY OF CAMBRIDGE
Department Name: Engineering
Abstract
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Organisations
People |
ORCID iD |
| John Robertson (Principal Investigator) |
Publications
Guo Y
(2015)
Ab initio calculations of materials selection of oxides for resistive random access memories
in Microelectronic Engineering
Li H
(2017)
Germanium oxidation occurs by diffusion of oxygen network interstitials
in Applied Physics Letters
Li H
(2017)
Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces
in Applied Physics Letters
Li H
(2016)
Effect of metal oxide additions to quality on Ge/GeO2 interfaces
in Journal of Applied Physics
Li H
(2015)
Calculation of TiO 2 Surface and Subsurface Oxygen Vacancy by the Screened Exchange Functional
in The Journal of Physical Chemistry C
Sedghi N
(2017)
Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
in Applied Physics Letters
| Description | Ways to improve memory performance, The on/off memory window in RRAM devices can be widened due to our research, giving the devices longer endurance (lifetime) and greater reliability. |
| Exploitation Route | Materials selection for memory devices. The on/off memory window in RRAM devices can be widened due to our research, giving the devices higher endurance (lifetime). We have also developed a way to improve the materials choice for 2-terminal 'selector' devices. These are an essential component which is added in series to the RRAM element. |
| Sectors | Electronics |
| Description | Greater links with microelectronic companies such as Micron semiconductor. |
| First Year Of Impact | 2018 |
| Sector | Electronics |
| Impact Types | Economic |