Mechanisms and Control of Resistive Switching in Dielectrics
Lead Research Organisation:
University of Cambridge
Department Name: Engineering
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Organisations
People |
ORCID iD |
John Robertson (Principal Investigator) |
Publications
Guo Y
(2016)
AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels
in Journal of Applied Physics
Guo Y
(2015)
Comparison of oxygen vacancy defects in crystalline and amorphous Ta2O5
in Microelectronic Engineering
Guo Y
(2015)
Ab initio calculations of materials selection of oxides for resistive random access memories
in Microelectronic Engineering
Dawson J
(2015)
Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance
in Applied Physics Letters
Description | Ways to improve memory performance, The on/off memory window in RRAM devices can be widened due to our research, giving the devices longer endurance (lifetime) and greater reliability. |
Exploitation Route | Materials selection for memory devices. The on/off memory window in RRAM devices can be widened due to our research, giving the devices higher endurance (lifetime). We have also developed a way to improve the materials choice for 2-terminal 'selector' devices. These are an essential component which is added in series to the RRAM element. |
Sectors | Electronics |
Description | Greater links with microelectronic companies such as Micron semiconductor. |
First Year Of Impact | 2018 |
Sector | Electronics |
Impact Types | Economic |