Development of high breakdown, high power InP pHEMTS for millimeter wave frequency applications
Lead Research Organisation:
University of Manchester
Department Name: Electrical and Electronic Engineering
Abstract
Professor Mohamed Missous and his co-workers at the University of Manchester have developed and patented a novel prototype high breakdown voltage (>15V) InGaAs-InP-InAlAs pHEMT (pseudomorphic High electron mobility transistor). These devices, which have been fabricated using Molecular Beam Epitaxy, are ideally suited to millimetre wave applications requiring both high power and ultra low noise, such as defence, security & medical imaging and telecommunications. The purpose of the FOF project is threefold: 1. To design, fabricate and test the new InP HEMT's but at an operating frequency of > 70GHz, which is the required operating frequency for car radar imaging systems and to confirm high breakdown characteristics and thus potential high power. 2. To undertake a detailed market assessment to identify the key commercial applications of the technology, the level of fit between the needs of those applications and the performance of the InGaAs-InP-InAlAs pHEMTs and identify possible licensees for the technology 3. To market the technology to potential licensees or joint venture partners via visits, networking on the conference circuit and articles in scientific and trade journals.
Organisations
People |
ORCID iD |
Mohamed Missous (Principal Investigator) |
Publications
Boudjelida B
(2008)
Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach
in Materials Science in Semiconductor Processing
Bouloukou A
(2008)
Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications
in Materials Science in Semiconductor Processing