Investigation of Silicon-Carbide (SiC) Transistors as High-Voltage switches for SLHC detectors
Lead Research Organisation:
University of Cambridge
Department Name: Physics
Abstract
This specific proposal focuses on developing a test stand for transistors that are to be used as on-detector high voltage switches for the Upgraded ATLAS Tracker detectors. Candidate devices will have to be characterized before and after irradiation to see whether they can retain low leakage currents, and remain capable of switching High Voltages over their intended lifetime, while being exposed to very high irradiation levels.
To complete the test stand, a high quality High Voltage source is essential.
To complete the test stand, a high quality High Voltage source is essential.
Planned Impact
This research will benefit all areas where high-voltage switches are required in high radiation environments. For example, medical imaging devices. As we are looking at devices manufactured using novel technologies and materials, suppliers might well have an interest in the outcome of our research to improve their products, in particular the operation in radiative environments.
People |
ORCID iD |
Leonard Hommels (Principal Investigator) |
Publications
Villani E
(2020)
HVMUX, high voltage multiplexing for the ATLAS strip tracker upgrade
in Journal of Instrumentation
Villani E
(2017)
HVMUX, a high voltage multiplexing for the ATLAS Tracker upgrade
in Journal of Instrumentation
Villani E
(2015)
HVMUX, the High Voltage Multiplexing for the ATLAS Tracker Upgrade
in Journal of Instrumentation
Description | Testing method for evaluating radiation hardness of high-voltage transistors |
Exploitation Route | Other areas where high voltage needs switching in a high-radiation environment: space, medical equipment, nuclear industry. |
Sectors | Aerospace, Defence and Marine,Electronics |
Description | Joint investigation of novel High Voltage transistors |
Organisation | Rutherford Appleton Laboratory |
Department | RAL Space |
Country | United Kingdom |
Sector | Academic/University |
PI Contribution | We have characterised novel GaN based high-voltage transistors, irradiated these and tested these afterwards, both at room temperature and at -20 deg C |
Collaborator Contribution | Dr. G. Villani has performed irradiations of the GaN devices tested by us at the Birmingham cyclotron |
Impact | Assessment of the radiation hardness of GaN transistors for various radiation types is ongoing. Up to now, we have assessed the novel transistors to have a very high radiation hardness. |
Start Year | 2015 |