In situ observations of bonding reactions for high temperature electronics

The emergence of wide-bandgap semiconductors such as silicon carbide and gallium nitride has paved the way for a new generation of power electronic devices that can operate at relatively high temperatures (ranges which can run above 200C). Products incorporating such electronic devices will be extremely decisive for future advancements in the automotive, aerospace, energy and defense sectors. To enable high temperature operation of power electronics devices, solders products should withstand in those temperatures and suitable boding method to join them are required. Quality high temperature bonding is a kind of precursor to provide robust and relabel operation of the electronic devices at high temperatures with necessary electrical, thermal and mechanical interconnections. To successfully develop and establish new environmentally friendly solder materials and their joining methods based on quasi-ambient bonding technology platforms, a strong scientific understanding of relevant bonding mechanisms are essential.

Cutting edge fast synchrotron X-ray imaging tools will be used in this project to investigate those solder bonding processes and interface evaluation of the solders. In addition, high resolution electron microscopy will be employed to extract further complimentary scientific information of related to the bonding interfaces of a new range of emerging Pb-free solders.

The project is expected to deliver novel scientific details of the physical and metallurgical mechanism of Pb-free solder bond formations occur in new quasi-ambient bonding processes. Particularly those details will help to enhance and further develop next generation ultra-effective solder materials, which can be used with the state of the art soldering techniques.