Mid index integrated optical modulators

As part of the PhD project, we have envisioned to build a thick silicon nitride (SiN) platform for the fabrication of passive devices such as multiplexers (MUX/DMUX), splitters and combiners for optical transceivers in the O-band. The silicon nitride platform will be integrated with active devices to deliver high bandwidth with a micrometre scale footprint and low power consumption. Operating in the O-band and realised with standard CMOS processing, these devices will assure a MUX/DMUX with low temperature sensitivity, together with high speed and low power operation.
The project aims are to develop an integration scheme and process flow to integrate the active devices and SiN MUX/DMUX in the O band to cover the future requirements of data centres. To achieve the project goals the student will perform waveguide and active device simulations (optical and electrical), and will design fabrication masks and process flows for all the structures. The devices will have to be fabricated in the nanofabrication centre and characterised in the photonics laboratory.
The integration of these CMOS compatible materials and devices have never been demonstrated and would represent a significant achievement in the field of silicon photonics. The student will collaborate on the current EPSRC project Reference: EP/R003076/1 Title:Rockley Photonics and the University of Southampton: A Prosperity Partnership
EPSRC Research Topic Classifications: Optoelect. Devices & Circuits EPSRC
Industrial Sector Classifications: Communications, Manufacturing, Electronics, Information Technologies