Characterisation and manipulation of strain in halide perovskite semiconductors
Lead Research Organisation:
University of Cambridge
Department Name: Physics
Abstract
Halide perovskites are a promising material class for semiconductor applications, especially in optoelectronic devices. Strain can be present in films of these materials on multiple different length scales and has been associated with non-radiative losses in devices. Using synchrotron X-ray techniques (such as ptychography and BCXDI), as well as more conventional X-ray measurements, we aim to visualise the chemical and structural properties of strain gradients. This, in combination with time-resolved luminescence tomography measurements for mapping charge carrier diffusion and ionic motion, will help us to understand the role strain plays in these devices. Once this is achieved, it may also be possible to manipulate the strain gradients through device processing.
Organisations
| Description | We have been able to map strain in halide perovskite semiconductors with Bragg coherent diffraction imaging. This technique allows us to compute the strain at every point in a 3D crystal. By analysing the strain fields present, we identify extended crystal defects, called dislocations, and find that they are more mobile under under illumination (i.e. operational conditions for a solar cell). |
| Exploitation Route | Our results shine light on the effect of strain in materials relevant for solar energy applications. As such, the results will help design more efficient and robust solar cells. |
| Sectors | Electronics,Energy,Environment |
| Description | The results from this work are relevant to industrial manufacture of thin film solar cells. |
| Sector | Electronics,Energy,Environment,Manufacturing, including Industrial Biotechology |