Development of GaAsBiN alloys for next generation photodiodes and solar cells.

Bismuth (Bi) and Nitrogen (N) are Group V elements that can be added in small quantities to conventional III-V semiconductors like GaAs, to vary the valence/conduction band structure with a relatively small change to the lattice parameter. This makes it potentially useful for a range of opto-electronic devices such as photodetectors, light emitting diodes and solar cells. The student will be closely involved in the growth of epitaxial layers of GaAsBiN and the characterisation of their optical, electrical and structural properties. Suitable test structures will be grown and the student will look at the photoluminescence and leakage current properties of this material, initially at room temperature but then down at 77 Kelvin. A major objective will be to minimise the occurrence by defects and traps during the growth of these epitaxial layers.