To develop and characterise quantum dot based single photon emitters that operate in the telecoms C-band

The aim of this PhD project is to develop and characterise quantum dot based single photon emitters that operate in the telecoms C-band. The project will focus on InAs/GaAs and InAs/Si quantum dot structures with the initial aim of isolating and characterising the dots. From these, structures will be fabricated to optically or electrically inject charge carriers with the aim of producing and verifying single photon emission in the O-band. Following this, the project will focus on implanting atoms such as bismuth into the quantum dots to take advantage of band anti-crossing to move the emission wavelength into the C-band. The project will primarily be experimental in nature but will also require computational modelling of the structures.&&