Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r -plane sapphire (2011)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201001043
Publication URI: http://onlinelibrary.wiley.com/doi/10.1002/pssc.201001043/abstract
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 7-8