Defect Reduction in Semi-Polar (11bar 22) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth (2013)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Publication URI: http://iopscience.iop.org/1347-4065/52/8S/08JB01/pdf/1347-4065_52_8S_08JB01.pdf
Type: Conference/Paper/Proceeding/Abstract
Volume: 52
Parent Publication: Japanese Journal of Applied Physics