A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination (2014)

First Author: Flewitt A
Attributed to:  AUTOFLEX - Automated Integration of Flexible Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4870457

Publication URI: http://dx.doi.org/10.1063/1.4870457

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 13