Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack (2012)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2012.2218565
Publication URI: http://dx.doi.org/10.1109/led.2012.2218565
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 12