Bound states within the notch of the HfO2/GeO2/Ge stack (2013)

First Author: Wang Z
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.4794378

Publication URI: http://dx.doi.org/10.1116/1.4794378

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Issue: 2