Investigation of the GaN-on-GaAs interface for vertical power device applications (2014)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4887139
Publication URI: http://dx.doi.org/10.1063/1.4887139
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 1