High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm (2007)

First Author: Graham D
Attributed to:  Optimising GaN light emitting structures on free-standing GaN substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2434823

Publication URI: http://dx.doi.org/10.1063/1.2434823

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 3