Probing residual strain in epitaxial graphene layers on 4H-SiC(0001¯) with Raman spectroscopy (2011)
Attributed to:
Spintronics at Leeds: Platform Grant
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3551625
Publication URI: http://dx.doi.org/10.1063/1.3551625
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 5