High quantum efficiency InGaN/GaN structures emitting at 540 nm (2006)

First Author: Graham D

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200565252

Publication URI: http://dx.doi.org/10.1002/pssc.200565252

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 6