Planar InAs photodiodes fabricated using He ion implantation (2012)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ipcon.2012.6358542
Publication URI: http://dx.doi.org/10.1109/ipcon.2012.6358542
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4577-0731-5