Temperature dependence of impact ionization in InAs. (2013)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.21.008630
PubMed Identifier: 23571953
Publication URI: http://europepmc.org/abstract/MED/23571953
Type: Journal Article/Review
Volume: 21
Parent Publication: Optics express
Issue: 7
ISSN: 1094-4087