1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon (2012)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.20.010446
PubMed Identifier: 22565669
Publication URI: http://europepmc.org/abstract/MED/22565669
Type: Journal Article/Review
Parent Publication: Optics Express
Issue: 10
ISSN: 1094-4087