InAs Electron-Avalanche Photodiodes: From leaky diodes to extremely low noise avalanche photodiodes (2011)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/pho.2011.6110533
Publication URI: http://dx.doi.org/10.1109/pho.2011.6110533
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4244-8940-4