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High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. (2011)

First Author: Marshall AR

Attributed to: Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1364/oe.19.023341

PubMed Identifier: 22109211

Publication URI: http://europepmc.org/abstract/MED/22109211

Type: Journal Article/Review

Volume: 19

Parent Publication: Optics express

Issue: 23

ISSN: 1094-4087