High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. (2011)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.19.023341
PubMed Identifier: 22109211
Publication URI: http://europepmc.org/abstract/MED/22109211
Type: Journal Article/Review
Volume: 19
Parent Publication: Optics express
Issue: 23
ISSN: 1094-4087