Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K (2011)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jqe.2011.2128299
Publication URI: http://dx.doi.org/10.1109/jqe.2011.2128299
Type: Journal Article/Review
Parent Publication: IEEE Journal of Quantum Electronics
Issue: 6