Impact Ionization in InAs Electron Avalanche Photodiodes (2010)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2010.2058330
Publication URI: http://dx.doi.org/10.1109/ted.2010.2058330
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 10