Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates (2012)

First Author: Nguyen V

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.tsf.2011.10.099

Publication URI: http://dx.doi.org/10.1016/j.tsf.2011.10.099

Type: Journal Article/Review

Parent Publication: Thin Solid Films

Issue: 8