A TEM study of Ge-on-(111)Si structures for potential use in high performance PMOS device technology (2011)
Attributed to:
Renaissance Germanium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/326/1/012023
Publication URI: http://dx.doi.org/10.1088/1742-6596/326/1/012023
Type: Journal Article/Review
Parent Publication: Journal of Physics: Conference Series