TEM analysis of Ge-on-Si MOSFET structures with HfO 2 dielectric for high performance PMOS device technology (2010)
Attributed to:
Renaissance Germanium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/209/1/012061
Publication URI: http://dx.doi.org/10.1088/1742-6596/209/1/012061
Type: Journal Article/Review
Parent Publication: Journal of Physics: Conference Series