The influence of growth conditions on carrier recombination mechanisms in 1.3 µm GaAsSb/GaAs quantum well lasers (2013)

First Author: Hossain N
Attributed to:  Efficient Photonic Devices for Near- and Mid-Infrared Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4789859

Publication URI: http://dx.doi.org/10.1063/1.4789859

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 4