The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing (2012)
Attributed to:
Efficient Photonic Devices for Near- and Mid-Infrared Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4728028
Publication URI: http://dx.doi.org/10.1063/1.4728028
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 11