Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi (2014)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/47/34/345103
Publication URI: http://dx.doi.org/10.1088/0022-3727/47/34/345103
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 34