Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 (2006)

First Author: Oliver R
Attributed to:  Optimising GaN light emitting structures on free-standing GaN substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2005.12.075

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2005.12.075

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 2