Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization (2013)

First Author: Tang B
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2013.03.067

Publication URI: http://dx.doi.org/10.1016/j.mee.2013.03.067

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering