Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs (2012)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2011.2177839
Publication URI: http://dx.doi.org/10.1109/ted.2011.2177839
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 3