Investigation of Abnormal $V_{\rm TH}/V_{\rm FB}$ Shifts Under Operating Conditions in Flash Memory Cells With $ \hbox{Al}_{2}\hbox{O}_{3}$ High-$\kappa$ Gate Stacks (2012)

First Author: Baojun Tang
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2012.2194294

Publication URI: http://dx.doi.org/10.1109/ted.2012.2194294

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 7