Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-$\kappa$ Interpoly Gate Dielectric Stacks (2013)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2013.2264163
Publication URI: http://dx.doi.org/10.1109/ted.2013.2264163
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 7