Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? (2008)

First Author: Bennett N
Attributed to:  University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.2816929

Publication URI: http://dx.doi.org/10.1116/1.2816929

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Issue: 1